Samsung MZ-V9S4T0 4 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

SKU
MZ-V9S4T0BW
-17%
Special Price $545.60 $496.00 Regular Price $654.72 $595.20
Out Of Stock - Contact for availability
MZ-V9S4T0BW
Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.
SKU MZ-V9S4T0BW
EAN 8806095575667
Specification
Features
InterfacePCI Express 4.0
Component forPC
SSD capacity4 TB
Read speed7150 MB/s
Write speed6300 MB/s
NVMeYes
NVMe version2.0
Memory typeV-NAND TLC
Random read (4KB)850000 IOPS
Random write (4KB)1350000 IOPS
Security algorithms256-bit AES
S.M.A.R.T. supportYes
TRIM supportYes
Hardware encryptionYes
Mean time between failures (MTBF)1500000 h
SSD form factorM.2
M.2 SSD size2280 (22 x 80 mm)
Performance
InterfacePCI Express 4.0
Component forPC
SSD capacity4 TB
Read speed7150 MB/s
Write speed6300 MB/s
NVMeYes
NVMe version2.0
Memory typeV-NAND TLC
Random read (4KB)850000 IOPS
Random write (4KB)1350000 IOPS
Security algorithms256-bit AES
S.M.A.R.T. supportYes
TRIM supportYes
Hardware encryptionYes
Mean time between failures (MTBF)1500000 h
Design
SSD form factorM.2
Weight & dimensions
Width80.2 mm
Depth2.38 mm
Height22.1 mm
Weight9 g
Operational conditions
Operating temperature (T-T)0 - 70 °C
Technical details
InterfacePCI Express 4.0
Operating temperature (T-T)0 - 70 °C
SSD form factorM.2
Manufacturer Samsung
In Stock No